PART |
Description |
Maker |
BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
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BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,; LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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NXP Semiconductors N.V.
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MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978- |
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty LDMOS Pulsed Power Transistor
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M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
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BLA1011S-200 BLA1011-200 BLA1011-200.112 LA1011-20 |
Avionics LDMOS transistor BLA1011S-200<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,; 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
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INFINEON[Infineon Technologies AG]
|
LK822-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
L88016-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF7G22L-130N |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G20L-250P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G15LS-200 |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLP05H6110XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|